ABSTRACT
Berlin et al. (1990) described a model that takes into account both bond (energetic) and site (positional) disorder. The model describes the displacement of an electron in the Coulomb field of its parent cation and predicts the recombina tion kinetics for site disorder in the presence of exponential and Gaussian distributions of structural traps. In the long-time limit, the recombination rate follows a i (n-ot/2) relationship, where a is a positive constant. For Gaussian
diffusion, a = 1 and the recombination kinetics reduce to the Smoluchowski equations. For non-Gaussian diffusion, a < 1, depending on the type of disorder and the distribution of site energies.
