ABSTRACT
Radio frequency (RF) power transistors are the most critical components in the amplifier system since their characteristics have direct implications in amplifier response including power, stability, linearity, and the profile of the amplifier itself. Metal–oxide–semiconductor field-effect transistors (MOSFETs) parameters are identified by manufacturers at different static and dynamic conditions. Hence, each MOSFET device has been manufactured with different characteristics. A designer makes the selection of the appropriate device for the specific circuit under consideration. Common MOSFET packages are identified as transistor outline (TO), small outline transistor (SOT), and small outline package (SOP). The TO package specifications such as TO-92, TO-92L, TO-220, TO-247, TO-252, etc., are plug-in package design. The thermal profile of MOSFETs is important in device performance. When power loss occurs, it is turned into heat and increases the junction temperature. The transient characteristics of a MOSFET are a function of many factors including DC voltage, switching frequency, and internal and extrinsic parameters.
