ABSTRACT
For improving the resolution of a polymer image, shorter wavelength exposure is very effective. An exposure of 365 nm was common for conventional photofabrication. However, 193 nm and extra-short UV (EUV) exposures have been applied for known and potential photofabrications. In those fields conventional photopolymers such as naphthoquinone cannot be used because of strong absorption by polymer chains at shorter wavelength regions. Chemically amplified resists are effective photopolymers at those regions. Chemically amplified resists consist of base polymers and photoacid generators (PAGs).
