ABSTRACT
GaN-based semiconductors have been intensively investigated because of their inherent advantages including wide and direct energy band gap, high electron drift velocity, high breakdown field strength, and superior thermal and chemical stabilities. Because of the significant progress in GaN-based semiconductor film deposition techniques, and research on its physical properties, device design, and fabrication
15.1 Introduction .................................................................................................. 415 15.2 Ohmic Contacts on GaN-Based Semiconductors ......................................... 417 15.3 Gate Oxides: Materials and Deposition Methods ......................................... 422 15.4 Surface Treatment of GaN-Based Semiconductors ...................................... 423
15.4.1 Sulfidation Method ...........................................................................424 15.4.2 Chlorination Method ........................................................................ 430 15.4.3 PEC Method...................................................................................... 432
15.5 GaN-Based Metal-Oxide-Semiconductor Devices ..................................... 436 15.6 GaN-Based MOSHEMTs .............................................................................442 15.7 Conclusions ................................................................................................... 454 References .............................................................................................................. 454
techniques, GaN-based semiconductors have been widely used in various applications, including optoelectronic devices, electronic devices, ultraviolet photodetectors, and gas sensors.
