GaN-Based HEMTs on Large-Diameter Si Substrate for Next Generation of High Power/High Temperature Devices

Increasing demand for high power amplifiers in wireless communication systems and radars has stimulated new developments in solid state device structures. One emerging area had been gallium nitride (GaN)-based FETs. Its large bandgap, high breakdown field, high electron mobility, and ability to form heterojunctions in the (In, Al, Ga)N material matrix make this material attractive in comparison to conventional gallium arsenide pseudomorphic-HEMTs (high electron mobility transistors). In the past decade, outstanding performance has been demonstrated with AlGaN/

16.1 Introduction .................................................................................................. 461 16.2 GaN-on-Si Devices for High Power at High Frequency ..............................463