ABSTRACT
Results ............................................................................................... 347 13.5 Neutron and Alpha Particle Induced Transients ........................................... 349
13.5.1 Neutron Induced SET Pulse Widths ................................................. 349 13.5.2 Alpha Particle Induced SET Pulse Widths ....................................... 351 13.5.3 Neutron and Alpha FIT Rates .......................................................... 351
As the device dimensions and operating voltages of integrated circuits (ICs) are shrunk to satisfy an ever-increasing demand for lower power and higher speed, integrated circuit sensitivity to radiation may increase signicantly [1-3]. Deep submicron devices show increased susceptibility to single-event effects (SEEs), which constitute a particular category of radiation effects [2] compared with previous technology generations. A single event (SE) occurs when an energetic particle, such as a heavy ion or neutron, strikes a device and causes a change in the device’s normal operation.
