ABSTRACT
Since the earlier chapters have provided excellent overviews of the materials and bandstructure issues of
SiGe, in this chapter we will focus on their application in heterostructure FETs (HFETs). We will briefly
discuss the transport issues of SiGe and SiGeC alloys that are relevant to HFETs. Then will discuss their
applications in buried-and surface-channel HFETs, with an emphasis on pHFETs. We will conclude by
briefly describing the vertical HFETs and implications for n-channel devices and CMOS.
