ABSTRACT
Impact avalanche transit time (IMPATT) devices diodes are known from silicon and III-V material. As
discrete devices mounted on special heatsinks, they are very powerful sources of microwave radiation. At
100 GHz CW-power of 1 W and pulsed power of 50 W can be obtained. The technology is complicated
but well established after three decades of development. The negative resistance level of these discrete
devices is rather low (at the order of a few ohms), which causes high efforts in designing appropriate
resonators.
