ABSTRACT
Knowledge of the basic electronic properties of silicon-based heterostructures is essential to understand
their applications. This chapter is a review of the electronic properties of strained SiGe, strained Si on
relaxed SiGe, and a brief introduction to strained Si1yCy/Si heterostructures. Because the energy band lineups are critical in determining the types of applications of these materials, the emphasis here is on
reviewing theoretical and experimental determinations of the energy band lineups (Sections 2.8.2 and
2.8.3). Section 2.8.4 introduces transport properties in such materials, with an eye towards field-effect
transistor (FET) applications, though readers are referred to other chapters of this volume for details on
transport and FET applications.
