ABSTRACT
High-speed monolithic integrated circuits (ICs) and large-scale ICs (LSIs) are the key components for
multigigabit data communication systems and wide-bandwidth radio communication systems. Such
systems include backbone networks, intercity communication networks, local area networks, and
Ethernet for data communications, and microwave and millimeter-wave mobile networks, fixed wireless
access, and intelligent transport systems for radio communications. To meet the growing demand for
such systems, both high-speed digital operation with sophisticated functions and high-frequency analog
operation should be implemented. From this point of view, high-speed SiGe HBT and SiGe HBT with
CMOS (BiCMOS) technologies are the most promising candidates to meet these requirements. This is
because SiGe HBTs with a sub-5-psec ECL-gate delay and cutoff frequency about 200 GHz have been
successfully demonstrated and can be fabricated by the well-established Si process, which is fully
compatible with the CMOS process. For the widespread application of these devices in high-speed
digital and RF analog ICs/LSIs, SiGe HBTs must be fabricated at a high yield. Moreover, high-quality
passive elements, including high-precision resistors, a high-Q varactor, an MIM capacitor, and high-Q
inductors, should also be available for integration on a chip.
