ABSTRACT
Ironically, despite the fact that SiGe HBTs at present dominate the commercial silicon heterostructure
world, the first Si-based heterostructure field effect transistor was demonstrated in 1986, predating the
first SiGe HBT by over 1 year. These earliest FETs were Schottky-gated, III-V-like n-and p-channel
modulation doped devices, which rapidly gave rise to a variety SiGe-based MOSFET topologies. More
recently, the field has centered on strained Si MOSFETs, because of its better compatibility with
mainstream CMOS, and the impressive mobility enhancements that can be realized in that system at
aggressively scaled gate lengths. Two fundamentally different ways of producing strained Si CMOS exist,
overview of ‘‘Uniaxial Strained Si CMOS.’’ More conventional SiGe-channel FETs, of various flavors, are
S. Thompson of the University of Florida, an overview of the world’s first commercially available
strained Si CMOS technology is presented. In addition to this substantial collection of material, and
the numerous references contained in each chapter, a number of review articles and books detailing the
operation and modeling of SiGe and strained Si FETs exist, including Refs. [1-8].
