ABSTRACT
This chapter is concerned with mapping the type and density of defects on the wafer. In such measurements, the intensity variation across the diffracted beam is recorded, and thus a map of the scattering power is recorded as a function of position. The resulting images were traditionally called x-ray topographs, and they are analogous to transmission electron micrographs. Despite the name, the technique is not principally sensitive to surface topography; it is the topography of the crystal lattice planes that is examined. We shall use the more descriptive term x-ray diffraction imaging, except when we refer to explicit historical work.
