ABSTRACT
Much research has been performed on active šlters for power conditioning and their practical applications since their basic principles of compensation were proposed around 1970 (Bird et al., 1969; Gyugyi and Strycula, 1976; Kawahira et al., 1983). In particular, recent remarkable progress in the capacity and switching speed of power semiconductor devices such as insulated-gate bipolar transistors (IGBTs) has spurred interest in active šlters for power conditioning. In addition, state-of-the-art power electronics technology has enabled active šlters to be put into practical use. More than one thousand sets of active šlters consisting of voltage-fed pulse-width-modulation (PWM) inverters using IGBTs or gate-turn-oœ (GTO) thyristors are operating successfully in Japan.
