ABSTRACT
The advances in ULSI technology are heavily based on downscaling of the minimum feature size of a metal-oxide-semiconductor eld-effect-transistor (MOSFET) [1,2]. NMOS (n-type MOSFET) and PMOS (p-type MOSFET) pair comprises a CMOS inverter circuit. The recent evolution of nanotechnology may provide challenges and opportunities for novel devices, such as singleelectron devices, carbon nanotubes, Si nanowires, and new materials. The utilization of quantum effects and ballistic transport characteristics may also provide novel functions for silicon-based devices. Among various candidate materials for nanometer-scale devices, silicon nanodevices are particularly promising because of the existing silicon process infrastructure in semiconductor industries, the compatibility to CMOS circuits, and a nearly perfect interface between the natural oxide and silicon. Nanoscale MOSFETs are particularly of great interest to discover fundamental physics as well as applications to the technology for product development. MOSFETs are grown on (100)-substrate for a better silicon dioxide (SiO2) interface.
