ABSTRACT
Electronic devices like diodes, transistors, and integrated electronic circuits are mostly made of silicon. Here, we assume that the reader is familiar with the basic knowledge of the functionality of these devices, which can be found in many textbooks, e.g., refs. [97,98]. However, some properties of the III-V compound semiconductors are very advantageous for such devices, in particular,
wide choice of band gaps, in particular large band gap for high voltage high power devices;
small effective electron masses in many compounds, which is excellent for high-frequency applications;
formation of complex heterojunctions possible, which enables new device concepts.
