ABSTRACT
This chapter discusses the evaluation of propagation delay and power dissipation. It introduces the approach to estimate resistance and capacitance to be used in propagation delay analysis. Since a function often has more than one way of implementation, these criteria can be used, either individually/in combination, to select a structure that suits a specific application. The simple metal-oxide-semiconductor field-effect transistor switch model has allowed complementary metal-oxide-semiconductor field-effect transistor logic circuits to be designed and analyzed easily. Voltage transfer characteristic describes the voltage relationship between the input and output signals of a circuit. Due to the complexity of Very Large Scale Integration circuits, switch-level simulation which considers transistors as switches is often used. In many cases, switch level simulation is still inefficient and gate level/block level simulation has to be used. The transistor gate capacitance and effective channel resistance values are relatively easy to determine since all we need to know is the length and width of the channel.
