ABSTRACT
In this chapter, an overview of the evolution, role, need, and advantages of technology computer-aided design (TCAD) tools as an aid toward process design, device simulation, and fabrication of modern ICs, device characterization, and compact model generation is given. The main objective of the chapter is to introduce the advantages of TCAD simulations for device and process technology development and characterization, to introduce the fundamental physics and mathematics involved with TCAD tools, and to expose readers to the most popular commercial TCAD simulation tools such as from Silvaco and Synopsys. In the chapter author also discusses the fundamentals of the mathematical model of elasticity, define a system of governing equations and corresponding boundary conditions, and describe sources of strain/stress and material parameters used for stress calculations in isotropic and anisotropic materials. In the chapter, advanced devices such as ultrathin-body silicon-on-insulator, high-electron-mobility transistors, AlGaN/GaN HFETs, and high-power SiC devices are considered.
