ABSTRACT
Semiconductor processes are continually modified to improve yield and to improve device characteristics. The primary objective of process simulation is to accurately predict the physical/structural layers and geometry of devices at the end of a process run, as well as the active dopant/stress distributions. The main objective of a device simulation is to understand the behavior of a device with different characteristics and under various bias conditions. Main elements of device simulation are device structure, material system parameters, circuit/contact boundary conditions, a list of physical effects to be captured, numerical constraints on the solver, a carrier transport model, and the modes of simulation. In the single-polysilicon process, the main advantage is the possibility of direct integration in a complementary metal-oxide-semiconductor process. The bipolar complementary metal-oxide semiconductor process has the advantages of having both bipolar, n– and p–metal-oxide-semiconductor field-effect transistors, in the same process.
