ABSTRACT
In the near future, SiGe devices and Si/SiGe superlattice-based devices may even play an important role in the integration of complex electronic circuitry with optoelectronic functionality on a single integrated circuit (IC) chip. SiGe is helping to meet the challenges of the mobile communication market by providing high integration, high performance, low noise, low current consumption, and outstanding efficiency. The emergence of SiGe BiCMOS technologies has made bipolar transistor simulation an important part of the demand for state-of-the-art process simulation capability. SiGe BiCMOS technologies utilize many of the same process operations as CMOS devices and, therefore, benefit directly from the simulation expertise gained from submicron CMOS process modeling research. The predictive simulation of a SiGeC HBT with a base biaxially stressed on silicon requires taking into account the combined effects of specific properties of the ternary SiGeC alloy and the biaxial strain induced by the lattice mismatch.
