ABSTRACT
In the previous chapters, we discussed how TFETs offer distinctive advantages over conventional MOSFETs due to their capability to achieve a subthreshold swing lower than 60mV/decade at room temperature. However, TFETs suffer from low ON-state current (ION ) and researchers have extensively explored techniques to boost the ION in a TFET. In the previous chapters, we reviewed different TFET architectures that are being investigated to address the problem of low ION and to improve other electrical characteristics of TFETs. We have also discussed potential applications of TFETs in different kinds of circuits and highlighted the merits and demerits of employing TFETs in CMOS circuits. In this chapter, we examine the future prospects of TFETs and assess their capability of being deployed for wide-scale commercial applications.
