ABSTRACT
The current in a conventional MOSFET is based on thermionic emission of carriers over a potential barrier. As a result, keeping the power consumption within an acceptable limit is one of the biggest challenges for the conventional MOSFETs at advanced technology nodes. Tunnel Field-Effect Transistors (TFETs), due to their different mechanism of current transport exhibit several interesting electrical characteristics and could be a feasible alternative to the conventional MOSFETs.
