ABSTRACT
In recent years, numerous mathematical models have been developed [1], based mainly on the classical MOS transistor model introduced by the empirical parameters. The contact resistance is generally estimated by employing the transmission line method, Kelvin probe microscopy, and the gated four-probe system that shows the series and the contact resistances as a function of the gate voltage [2]. Charge localization and conduction occur at the semiconductordielectric interface, as well as in the bulk of the organic semiconductor [3]. Therefore, the gate-contact overlap region needs to be analyzed separately for an adequate understanding of device operation.
