ABSTRACT
Thickness of the active layer is not the only factor that affects the OTFT’s electrical parameters; dielectric thickness is also a crucial influencing factor. A decrease in the thickness of the dielectric layer results in a significant reduction in the threshold voltage due to a high gate capacitance. Lower Vt is useful in reducing the device power consumption and is, therefore, beneficial in producing portable devices. In addition to this, the mobility also increases with reduction of the dielectric thickness. To date, most of the research work has been focused on exploring the impact of active layer thickness on the performance of the OTFT. Moreover, the majority of the studies are based on top contact structure only. However, the impact of the layers’ thicknesses is also based on the device structure due to charge carriers traversing on distinct path between the source and the drain. As a result, the thickness of layers affects the OTFT behavior differently while it is realized in top contact (TC) and bottom contact (BC) structures.
