ABSTRACT
Dual gate (DG) transistors are often preferred in silicon technology due to their tremendous superiority to single gate transistors. Similar to the improvements noticed in silicon, the characteristics of organic transistors can also be improved using a dual gate mechanism. Compared to a single gate (SG) transistor, the DG organic transistor exhibits improved performance due to charge carrier modulation [5] with biasing of both gates. Moreover, an increase in gate oxide charge density also helps in improving transistor performance. These transistors exhibit numerous advantages such as higher mobility, higher on/off current ratio, higher transconductance, steeper subthreshold slope, and, most important, a better control on the threshold voltage in comparison to the single gate. The characteristics of organic transistors can certainly be improved using double gate, thereby improving the performance of digital circuits as well.
