ABSTRACT
Numerous and diverse characterization techniques have been used for the evaluation of heteroepitaxial semiconductors, and have enabled the advancement of the field to its present state. It would be impossible to describe all of them here. Instead, this chapter emphasizes some of the most commonly used techniques, such as x-ray diffraction (XRD), electron diffraction, electron microscopy, crystallographic etching, and photoluminescence (PL). These basic methods have contributed greatly to our current understanding of heteroepitaxy. Some have also been adapted as routine characterization methods for commercial production of heteroepitaxial materials and devices.
