ABSTRACT
This chapter investigates the behavior of a microelectromechanical systems (MEMS) DC-contact switch and its characterization. The switch is designed, fabricated and tested using a simple gold-based surface micromachining process. Switching/release time measurement was carried out using the Agilent-made Infiniium digital storage oscilloscope-X 92504, 25 gigahertz high frequency digital storage oscilloscope. Hardening of the gold–gold contact material increases the resistivity during continuous contacting period even at room temperature. The Radio frequency power handling capability for a DC-contact MEMS switch is mostly limited by a localized temperature rise at the contact spot. The radio frequency power dissipation from the MEMS switch was examined using full-wave simulation in a High Frequency Structure Simulator platform. Different kinds of characterization processes are adopted to ensure the switch performance. These include profile analysis, mechanical, electrical, transient, S-parameter, temperature stability, linearity, power handling capability and reliability operations. Dielectric charging can significantly affect the switch actuation after a few cycles of operation.
