Domain Wall Scattering and Current-Induced Switching in Ferromagnetic Wires-Experiment

Research into spintronics and magnetoelectronic devices has seen growing interest in obtaining devices such as magnetic random access memory (MRAM)

and magnetic logic gates,

which can be controlled directly by use of applied voltages and currents rather than magnetic fields. This is partly due to the drawbacks associated with the use of magnetic fields, which include cross talk, high power consumption, and decreased integration densities.