ABSTRACT
Figure 17.33 shows the influence of input power on the Ar sputtering rate under both the weak anode magnetron (B//max¼ 280G) and no anode magnetron (B//max¼ 0G). A trend similar to that evident in Figure 17.31 is shown. In both cases, the sputtered materials redeposit near the edge of the glass tube because the CDST e2 is larger than the gap distance (a¼ 1.5 cm) under either of these conditions. The input power cannot be increased as high as that under a strong anode magnetron. Thus, one of the merits of the AMT system over plasma treatment systems without the influence of an anode magnetron is the ability to achieve a higher input power.
