ABSTRACT
Semiconductor-semiconductor and metal-semiconductor interfaces play a crucial role in modern electronic and optoelectronic devices. SiGe heterostructure materials and devices are expected to play an important role due to their compatibility with Si-processing technology. Microelectronic circuit fabrication requires metallization and the study of the metal/SiGe interface is therefore very important. For applications of poly-SiGe as gate material, the interaction of SiGe alloys with noble/refractory metals should also be investigated, as both refractory and noble metal-silicides are widely used for ohmic contacts, Schottky barrier diodes, diffusion barriers, low resistivity gates and interconnects.
