ABSTRACT
In chapter 3, we discussed the operating principle of a SiGe HBT, while in chapter 4 we focused on the basics of physical device simulation and gave some examples of its application. In particular, it has been shown that 2D simulations may be used with confidence for an accurate prediction of device performance. In this chapter, we develop this concept further by considering the simulation of some state-of-the-art SiGe HBTs, concentrating on those that have given particularly noteworthy performance. As SiGe technology continues to develop with device scaling, performance will naturally tend to improve, so we are only endeavouring to present particular examples in some detail.
