ABSTRACT
Much effort is being devoted to metal-oxide semiconductor (MOS) device modeling in deep submicron process [1-6]. Most of this effort addresses the modeling of short-channel and narrow-width effects to derive an accurate model of the threshold voltage and of the velocity saturation effect of the field dependent mobility. This has resulted in very complex modeling equations of the device performances. If these equations, validated on experimental silicon, can be used to accurately simulate analog designs with limited number of devices, they remain completely unpractical for digital design involving a huge number of components.
