One of the most promising applications of near-field optics is next-generation optical data storage. Optical memory with a high density and a high data transfer rate is in demand and needs an array of high throughput nanoscale light sources for writing and reading small bits on a medium. A systematic investigation of fabrication technology and optical performance of the fabricated apertures presented in previous chapters indicates that the structures could be applied for data storage. In this chapter, a hybrid structure of vertical cavity surface emitting lasers (VCSEL) and aperture array for optical near-field memory head, namely VCSEL/NSOM, is proposed. The first result of the fabrication and testing of writing and reading bits on a phase change medium (GeSbTe) using the fabricated structure is demonstrated.