ABSTRACT
Figure 34.2a and b shows a scanning tunneling microscopy (STM) image of an Si nanoparticle of ∼3 nm diameter on a graphite surface and the cross sections of the same region obtained at di erent bias voltages. Inhomogeneous structures are observed in the cross sections. Since STM provides information on the electronic structures at the observed bias voltage (Wiesendanger 1994, Sakurai and Watanabe 1999), the result indicates the presence of complex electronic structures even at the single-molecular level. e miniaturization of semiconductor devices into a 10 nm scale brings about another example. Local structures, such as atomic defects and dopant materials, inevitably a ect and govern the characteristic properties of macroscopic functions (Figure 34.3).
