ABSTRACT
Wide band-gap semiconductors are of particular interest since their large energy gap allows for the possibility of tuning optoelectronic devices to work from infrared to ultraviolet at high temperatures and high frequency. Among these semiconductors, gallium nitride (GaN) is especially of interest for its wide direct band gap. A er the successful synthesis of blue light-emitting GaN-based materials, research interest on GaN has intensi ed due to a great desire for high-e ciency blue light-emitting diodes or laser diodes. e fabrication of nanosized GaN materials has been a focused eld of research, both due to the fundamental nanoscale mesoscopic physics and the developing nanoscale devices. Low-dimensional GaN nanostructures are expected to improve device characteristics and possess superior structural stability and mechanical properties at high temperatures; thus, they can be used as building blocks for nanodevices.
