ABSTRACT
III-V nitrides are very attractive for Laser Diodes (LDs). Recently stimulated emission (Akasaki et al. 1995) and the pulse-lasing action (Nakamura et al. 1996) of the multiquantum well (MQW) laser diodes (LDs) by current injection at room temperature was reported. Furthermore, continuous-wave operation of MQW LDs with a lifetime of more than 10,000 hours has been achieved (Nakamura et at. 1997). Concerning the design of LDs, low threshold current density is one of the important requirements and it is tightly connected with the optical gain characteristics.
