ABSTRACT
Siemens AG, Corporate Technology, Otto Hahn Ring 6, D-81730 Miinchen, Germany
ABSTRACT: The high-resolution imaging and analytical capabilities of transmission electron microscopy (TEM) are applied to problems in process development and production of silicon integrated circuits. Conventional and high-resolution imaging are used to study the initial stages of dislocation generation at vertical bird beaks. Another topic is the application of electron spectroscopic imaging (ESI) to materials reactions at the bottom of contacts to silicon. The investigation of interfacial layers requires the small electron probe of a TEM with a field emission gun and electron energy loss spectroscopy (EELS) to identify light elements. Problems occuring during the integration of Ba1.,Sr,Ti03 dielectric layers into memory devices are addressed.
