ABSTRACT
ABSTRACT: The microscale recombination properties of modulation-doped (Al)GaAslln0_1Pllo.ssAs/GaAs heterostructures are analysed at 87 K by means. of plan-view electron beam induced current (EBIC) and cathodoluminescence (CL). Quantitative EBIC and CL measurements and imaging, associated with spectroscopic CL allow us to investigate a) the influence of the type of device (field effect transistor or conventional Schottky diode) on the collected signal b) the type of the dominating recombination at the quantum well.
