ABSTRACT
C Lang, D Nguyen-Manh, and D J H Coekayne Department of Materials, Oxford University, Parks Road, Oxford, OXI JPH,UK
Abstract. The composition profile of a pyramid-shaped Ge(Si)/Si(OOI) quantum dot has been calculated using a combination of molecular static relaxations and a Monte Carlo process. The strain field and the displacement field of the non-uniformly alloyed quantum dot have been calculated using finite element analysis and compared to the case of a uniform alloying profile. TEM image simulations based on the displacements calculated in the finite element analysis have been performed. It is found that the differences in the contrast IX:tween uniformly and non-uniformly alloyed pyramidshaped quantum dots are not significant.
