Selected techniques for examining the electrical, optical and spatial properties of extended defects in semiconductors

Spatial pattern was assessed using a nearest neighbour distribution parameter, by CQmparison with a Poisson distribution, and by means of radial correlation and autocorrelation analysis. The methods are described in [4} and briefly in section 5. Here the distribution of 'v-pits' was evaluated for a 14 period Ino.09GIIo.9JN/GaN multi-~uantum well grown by MOVPE at 860°C on a GaN buffer on (0001) sapphire [5].