ABSTRACT
Abstract. Results of TEM studies of dislocation-based silicon light emitting devices are presented. The basics of these devices are dislocation loops, which were formed by implantation of boron ions inn-type Si (100) wafers, and by subsequent rapid thermal annealing. Dislocation loops were found to be of the interstitial type, with Burgers vectors of a/3 <111>, sitting in the four non-parallel { 111} lattice planes. Their appearance, distribution and density were correlated to ion implantation parameters.
