ABSTRACT

ABSTRACT: Group III-nitride-arsenides are prom1smg materials for communications in the optimum wavelength range for the optical fibre (1.3-1.5 ~). In this work, we analyse the structural properties of GalnNAs multi-quantum wells (MQWs) grown by Molecular Beam Epitaxy (MBE) with increasing In and N contents by means of Cross-Section (X-) and Planar View (PV-) Transmission Electron Microscopy (TEM). Phase separation due to In or N segregation, or both, has been observed in all the samples, causing the undulation of the wells in the Nrich structures. In addition, threading dislocations, stacking faults and dislocation loops are observed. The formation of these structural defects is discussed.