ABSTRACT
Abstract. The mesa-type RF-enhanced InGaAs/InAlAs UTC-PD is presented. The on-wafer measurement of frequency response shows a RF-enhancement effect, exhibiting more than 3 dB gain at 50 GHz with respect to the DC-response. The responsivity of a device increases with increasing bias, and the measured 3 dB-bandwidth is in excess of 50 GHz. The on-wafer measurement of 40 Gbps NRZ eye-patterns shows 310 mV output voltage with +11.5 dBm optical power. 1
1. Introduction The high-output photodetector (PD) combined with the optical preamplifier can eliminate the need for a broadband electronic amplifier, and improve signal to noise ratio. Due to high-speed and high-saturation-output capability, the uni-traveling-carrier (UTC) PD is one of the best candidates for large-capacity fiber-optic communication, a millimeter-wave photonic links and ultra-fast measurement systems [1-3]. Recently, UTC-PD finds its application in the analog optical link such as cable TV (CA-TV), phased array antennas, and photonic analog-to-digital (A/D) converter [2].
