ABSTRACT

On the other, GalnNAs/GaAs systems has been a popular research candidate in order to develop long wavelength lasers, which has a strongly sublinear bandgap energy dependence between GaAs and GaN with a much larger alloy bandgap bowing parameter than for any other ternary semiconductors. Moreover, addition of nitrogen mainly increases the conduction band offset, which in turn improves the high temperature performance of semiconductor lasers [4]. Several groups have reported the growth of GalnNAs QDs by different epitaxial methods and demonstrated PL emission at 1.3 ~ 1.5pm range [5-7].