ABSTRACT
Royal Institute o f Technology, Department o f Electronics, Electrum 229, S-164 40 Kista, Sweden
1. In tro d u c tio n ......................................................................... 131 2. Influence of Deep Impurity Described by Shockley Diagram . . 133 3. Common Deep Level Impurities in III-V Com pounds..... 135 4. Epitaxial Growth of Semi-Insulating III-V Compounds . . . . 136 5. Properties of Semi-Insulating III-V Layers Grown by Hydride
Vapour Phase E p i ta x y .......................................................... 139 6 . Selective and Planarising Epitaxy of Semi-Insulating HI-V
C o m p o u n d s ......................................................................... 150 7. A Case Study of Semi-Insulating InP:Fe Regrowth for High Speed
Laser Fabrication or Transverse Structure Optimisation . . . . 152 8 . Summary and C onclusions................................................. 159
1 INTRODUCTION
High speed electronic and optoelectronic devices based on semiconductors demand elimination of parasitic effects. The physical proximity of the integrated components demands an electrical isolation between them. These can be achieved by incorporating a properly chosen insulating material. If this material itself is a semiconductor, then its incorporation becomes compatible with the other semiconductor device fabrication processing steps. This chapter is devoted to epitaxially grown high resistive semiconductors formed from groups III and V. Such materials are called semi-insulating III-V compounds. Their usefulness in device fabrication is also indicated. Hereafter we use SI to denote “semi-insulating.”
