ABSTRACT
Department o f Electrical and Computer Engineering, University o f New Mexico, EECE Bldg. Office: 320C, Lab: L232, Albuquerque, NM 87131 1356, USA
1. Synopsis.......................................................................................... 1 2. S u b s tra te s ...................................................................................... 2 3. Doping and Im purities................................................................... 3 4. Characterization and A nalysis....................................................... 4 5. Applications and Devices.............................................................. 6 6 . Conclusion...................................................................................... 7
1 SYNOPSIS
Research on InP and related compounds has been increasing exponentially in recent years. This is due to the fact that InP is a key semiconductor for production of otptoelectronic and photonic devices. In particular, InP and related compounds such as InGaAsP alloy have been realized as very important materials for communication in the 1.3 and 1.55 pm spectral regions. The applications of InP and related materials have been extended to other areas that include laser diodes, light emitting diodes, photodetectors, waveguides, photocathodes, and solar cells. I found it difficult to cover all major research areas on InP in a single book. It is even more difficult to choose a limited number of topics to include in one volume. However, in this volume, chapters and authors were chosen to achieve a balance between the properties of bulk materials, doping, characterization of both bulk and heterojunctions, alloys, heterostructures and superlattices, and applications and devices. It is my hope that this volume provides a good starting point for those who are new to the subject and contains detailed results and in depth discussions for those who are experts in the field.
