ABSTRACT
Photonics Research Center, Korea Institute o f Science and Technology, Seoul 130-650, Korea
1. In tro d u c tio n ................................................................................... 443 2. Energy Level Calculation of Interdiffused QW Structure . . . 445 3. DCQWD by Using PECVD Grown Dielectric Film . . . . . . 448
3.1. DCQWD of Low Temperature Grown GaAs Capped QW Structure....................................................................................... 448
3.2. Dependence on the Film Growing Condition .........................452 4. Carrier Lifetimes in Disordered QW S tructure..................................462 5. S u m m a ry ............................................................................................ 467
The multiple quantum well(MQW) structure is a good cadidate to monolithically integrate lasers and waveguides for realizing photonic integrated circuits(PICs). For such an application, certain types of techniques are needed to define different bandgaps at the active and the passive part of the PICs. Quantum well disordering (QWD) teniques [1-13] have been used to locally disorder the MQW structure without any regrowth and/or selective growth step. Since the disordering of MQW results in a blue shift in bandgap and changes in refractive index near bandgap, these techniques can be used to fabricate lasers and waveguides monolithically with only one-step epitaxial growth [14-17].
