Deposition of Ba[sub(1-x)]Sr[sub(x)]TiO[sub(3)] SrTiO[sub(3)] Via A Liquid Source CVD (LSCVD) for Ulsi Dreams

It is generally acknowledged that future ULSI DRAMS will require charge storage densities far beyond what can presently be achieved with conventional silicon dioxide (or silicon nitride) dielectrics. We easily see from Figure 1 that the inte­ grated circuit industry must move to new high dielectric constant materials if such devices are to be built within reasonable design, process and economic constraints in the near future.