ABSTRACT
Over the past decade, metallorganic chemical vapour deposition (MOCVD) has developed into a versatile and reliable crystal growth technique. Very significant improvements have been made in understanding and controlling the purity, perfection and device properties of GaAs-based materials due mainly to the stimulus received from successful device applications in optoelectronics and microwave areas. GaAs has been considered as a possible alternative to silicon in the field of memories and microprocessors. However, technical improvements in silicon have raised requirements, challenging such possibilities. On the other hand, certain fields unexplored by silicon techniques, such as optoelectronics or TV satellite transmission, have turned out to be the major forces in propelling forward the future of GaAs and related compounds.
