ABSTRACT
The integrated-circuit (IC) performance is determined by the characteristics of basic components or elements, which can be fabricated in the metal oxide semiconductor (MOS) technology. Although inductors are generally realized off-chip, there is an increasing interest in the integration all circuits elements in a single structure. The drain and source of the nMOS transistor are realized by two heavily doped n-type semiconductor regions, which are implanted into a lightly doped p-type substrate or bulk. MOS processes made up of lightly doped substrate and wells can be used for the inductor design. The fabrication of an IC starts with the production of silicon wafers, which are then processed using various depositions and etching techniques, such as photolithography. The fabrication of basic MOS structures requires several masking sequences, such as n-well, active, polysilicon, select, contact, metal, via, and overglass. The physical design involves steps of floor planning, timing optimization, placement, routing, and layout generation.
