ABSTRACT
The hardware implementation of switched-capacitor (SC) circuits must have the following characteristics: low power consumption and low chip area. However, real components are subject to several nonidealities that affect the circuit performance. Because SC structures can be configured to reduce the limitations, they appear to be suitable for interfacing and implementation of signal processing operations. MOS capacitors are usually formed between two layers of polycrystalline silicon or metal, or between polycrystalline silicon and heavily doped crystalline silicon. For a good matching of capacitors, the voltage errors due to nonidealities are injected into the common-mode signal path and the differential signal remains unaffected in the first order. SC circuits provide a high performance solution for the resistor implementations in the analog discrete-time domain. SC techniques result in high-precision circuits because their transfer function coefficients are ideally determined by the clock frequency and capacitance ratios.
